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· Builder record
Indian Institute of Science (IISc), Bangalore
Academic
Filed · indian-institute-of-science-iisc-bangalore · Last verified 2026-07-15
Prototype
Assessed stage · IndiaBUILD, from evidence
Prototype
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01
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00
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4 builders
A·01
HEMT device design
Demonstrated
hardware
Evidence
independently corroborable, distinct from claims
1 · [milestone]
First indigenous e-mode GaN HEMT with novel aluminum-titanium oxide gate architecture achieving 600V/4A performance
2 · [publication]
IEEE Transactions on Electron Devices Vol. 66 Issue 6, June 2019: AlGaN/GaN HEMT e-mode operation via gate stack engineering
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